PDS8966A mosfet equivalent, n-channel mosfet.
* 80V,19A, RDS(ON) =13mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
Applications
* Netw.
SOP8 Pin Configuration
DD D D
SSSG
G
D S
BVDSS 80V
RDSON 13m
ID 19A
Features
* 80V,19A, RDS(ON) =13mΩ@VGS.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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